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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 9, Pages 1237–1242 (Mi phts7697)  
This article is cited in 3 scientific papers (total in 3 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method

K. A. Svita, D. Yu. Protasova, L. L. Sveshnikovaa, A. K. Shestakova, S. A. Teysa, K. S. Zhuravlevb

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Full-text PDF (1130 kB) Citations (3)
Abstract: Tunneling electron transport through CdS nanocrystal arrays fabricated by the Langmuir–Blodgett method are studied by scanning electron spectroscopy. The effect of the matrix-annealing atmosphere on tunneling transport through the nanocrystal arrays is studied. Electron capture at traps in the case of nanocrystals annealed in vacuum is detected by tunneling current-voltage characteristics analyzed using a model relating the data of tunneling spectroscopy, photoluminescence, and quantum-mechanical calculation. Analysis shows that the nanocrystal surface is passivated by an ammonia monolayer upon annealing in an ammonia atmosphere. It is found that the substrate and surrounding non-passivated nanocrystals have an effect on the electron polarization energy.
Received: 19.11.2013
Accepted: 03.12.2013
English version:
Semiconductors, 2014, Volume 48, Issue 9, Pages 1205–1210
DOI: https://doi.org/10.1134/S1063782614090206
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. A. Svit, D. Yu. Protasov, L. L. Sveshnikova, A. K. Shestakov, S. A. Teys, K. S. Zhuravlev, “Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir–Blodgett method”, Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1237–1242; Semiconductors, 48:9 (2014), 1205–1210
Citation in format AMSBIB
\Bibitem{SviProSve14}
\by K.~A.~Svit, D.~Yu.~Protasov, L.~L.~Sveshnikova, A.~K.~Shestakov, S.~A.~Teys, K.~S.~Zhuravlev
\paper Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir--Blodgett method
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 9
\pages 1237--1242
\mathnet{http://mi.mathnet.ru/phts7697}
\elib{https://elibrary.ru/item.asp?id=22018940}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 9
\pages 1205--1210
\crossref{https://doi.org/10.1134/S1063782614090206}
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  • https://www.mathnet.ru/eng/phts/v48/i9/p1237
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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