Comparison of the radiation hardness of silicon and silicon carbide

The radiation hardness of silicon carbide and silicon are compared. It is shown that one of the main characteristics of the radiation hardness of a semiconductor, the carrier removal rate $V_d$, strongly depends on its measurement conditions in the case of wide-gap semiconductors. A conclusion is made that comparison of the values of $V_d$, obtained at room temperature for SiC and Si, is not fully adequate from the physical standpoint.