Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose

The properties of silicon-on-insulator films implanted with high hydrogen-ion doses ($\sim$ 50 at%) and annealed under a pressure of 10.5 kbar are studied using the Raman scattering (RS) method. A high degree of optical-phonon localization is detected in the films under study, which is retained to an annealing temperature of $\sim$ 1000$^\circ$C and is explained by the formation of silicon nanocrystals. It is found that the activation energy of annealing of the structural relaxation of dangling bonds in films with a high hydrogen content is independent of the annealing pressure. The activation energy of growth of the crystalline phase, calculated from RS spectra is $\sim$ 1.5 eV and is independent of pressure. The effect of hydrostatic pressure consists only in a decrease in the frequency factor limiting Si–Si bond relaxation during ordering.