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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 10, Pages 1394–1397
(Mi phts7725)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor physics
$P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)
P. N. Brunkovab, N. D. Il'inskayaa, S. A. Karandashova, N. M. Latnikovac, A. A. Lavrova, B. A. Matveeva, A. S. Petrovd, M. A. Remennyia, E. N. Sevostyanovc, N. M. Stusa a Ioffe Institute,
194021 St. Petersburg, Russia
b National Research University of Information Technologies, Mechanics and Optics (ITMO), 197101 St. Petersburg, Russia
c LETI Ul’yanov (Lenin) St. Petersburg Electrotechnical University,
197376 St. Petersburg, Russia
d Electron National Research Institute,
194223 St. Petersburg, Russia
Abstract:
InAs single heterostructure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 $\mu$m spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as $p$–$n$ junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.
Received: 14.01.2014 Accepted: 24.01.2014
Citation:
P. N. Brunkov, N. D. Il'inskaya, S. A. Karandashov, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, A. S. Petrov, M. A. Remennyi, E. N. Sevostyanov, N. M. Stus, “$P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)”, Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1394–1397; Semiconductors, 48:10 (2014), 1359–1362
Linking options:
https://www.mathnet.ru/eng/phts7725 https://www.mathnet.ru/eng/phts/v48/i10/p1394
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