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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 11, Pages 1444–1446 (Mi phts7735)  
Electronic properties of semiconductors

Methods for estimating the compensating-impurity concentration in Hg-doped Ge

V. F. Bannaya

Moscow State Humanitarian University named after M. A. Sholokhov
Full-text PDF (126 kB)
Abstract: Methods for estimating the compensating-impurity concentration from the segment of curves corresponding to temperatures $T >$ 50 K are suggested based on analysis of the results of measurements of the Hall constant and mobility in a broad temperature range for Hg-doped Ge samples. It is concluded that local Hg inclusions in the sample matrix are ionized in this temperature range and both methods are applicable irrespective of the chemical nature of the impurity.
Received: 17.12.2013
Accepted: 24.01.2014
English version:
Semiconductors, 2014, Volume 48, Issue 11, Pages 1408–1410
DOI: https://doi.org/10.1134/S1063782614110062
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. F. Bannaya, “Methods for estimating the compensating-impurity concentration in Hg-doped Ge”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1444–1446; Semiconductors, 48:11 (2014), 1408–1410
Citation in format AMSBIB
\Bibitem{Ban14}
\by V.~F.~Bannaya
\paper Methods for estimating the compensating-impurity concentration in Hg-doped Ge
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2014
\vol 48
\issue 11
\pages 1444--1446
\mathnet{http://mi.mathnet.ru/phts7735}
\elib{https://elibrary.ru/item.asp?id=22018981}
\transl
\jour Semiconductors
\yr 2014
\vol 48
\issue 11
\pages 1408--1410
\crossref{https://doi.org/10.1134/S1063782614110062}
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