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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 11, Pages 1447–1457
(Mi phts7736)
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This article is cited in 47 scientific papers (total in 47 papers)
Electronic properties of semiconductors
A DFT study of BeX (X = S, Se, Te) semiconductor: modified Becke Johnson (mBJ) potential
D. P. Raiab, M. P. Ghimirec, R. K. Thapab a Beijing Computational Science Research Center,
Beijing 100084, People’s Republic of China
b Dept. of Physics, Mizoram University, Aizawl, India-796004
c MANA, National Institute for Material Sciences,
Tsukuba, Japan
Abstract:
The electronic, optical and elastic properties of BeX were performed within full potential liberalized augmented plane wave method based on density functional theory (DFT). Generalized gradient approximation (GGA) and modified Becke Johnson (TB-mBJ) potential were used for exchange correlation. The mBJ gives improved band gap as compare to GGA and in close agreement with the experimental results. The present band gaps of BeS, BeSe and BeTe calculated within mBJ are 4.40, 4.0 and 2.40 eV respectively.
Received: 25.02.2014 Accepted: 11.03.2014
Citation:
D. P. Rai, M. P. Ghimire, R. K. Thapa, “A DFT study of BeX (X = S, Se, Te) semiconductor: modified Becke Johnson (mBJ) potential”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1447–1457; Semiconductors, 48:11 (2014), 1411–1422
Linking options:
https://www.mathnet.ru/eng/phts7736 https://www.mathnet.ru/eng/phts/v48/i11/p1447
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