Hall effect in CdTe crystals doped with Sn from the vapor phase

The Hall effect in semiinsulating CdTe crystals doped with a Sn impurity from the vapor phase in a closed volume is studied. It is found that the conductivity is due to a donor center with $E_t\approx$ 0.7 eV and the concentration of electrons and their mobility at 300 K are (4–8) $\times$ 10$^6$ cm$^{-3}$ and 200–300 cm$^2$ V$^{-1}$ s$^{-1}$, respectively.