|
|
Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 11, Pages 1487–1491
(Mi phts7743)
|
|
|
|
This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Multilayer quantum-dot arrays of high bulk density
A. M. Nadtochiyabc, A. S. Payusovab, M. V. Maksimovabc, A. E. Zhukovabc, O. I. Simchukab a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c "Solar Dots" Ltd., St. Petersburg, 194021, Russia
Abstract:
The possibility of the formation of multilayer (30 layers) InAs/GaAs quantum-dot arrays with high structural and optical quality is demonstrated at small spacer-layer thicknesses (30–15 nm). In the case of decreasing the spacer-layer thickness to 15 nm, significant radiation polarization is observed, which points to the electron coupling of individual quantum dots due to tunneling.
Citation:
A. M. Nadtochiy, A. S. Payusov, M. V. Maksimov, A. E. Zhukov, O. I. Simchuk, “Multilayer quantum-dot arrays of high bulk density”, Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1487–1491; Semiconductors, 48:11 (2014), 1452–1455
Linking options:
https://www.mathnet.ru/eng/phts7743 https://www.mathnet.ru/eng/phts/v48/i11/p1487
|
|