Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate

Specific features of the growth of the GaN/AlN/Si heterocomposite in which layers of Group-III element nitrides are grown on a silicon substrate by hydride vapor-phase epitaxy are studied. The effect of the temperature at which the AlN buffer layer is grown on diffusion processes at the heterointerfaces and on the quality of the epitaxial layers being grown is considered. It is shown that, with the epitaxial technique used, the buffer layer should be grown at high temperatures (1080$^\circ$C) because the thickness of the component-mixing region is minimized in this case and abrupt interfaces are formed in the GaN/AlN/Si heterocomposite. The double-stage growth of gallium nitride on the high-temperature AlN buffer layer with a thickness of 300–400 nm makes it possible to obtain GaN layers with thicknesses of up to 0.3 $\mu$m without crack formation.