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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 12, Pages 1607–1610
(Mi phts7765)
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This article is cited in 7 scientific papers (total in 7 papers)
Surface, interfaces, thin films
Nanostructured Ge$_2$Sb$_2$Te$_5$ chalcogenide films produced by laser electrodispersion
D. A. Yavsin, V. M. Kozhevin, S. A. Gurevich, S. A. Yakovlev, B. T. Melekh, M. A. Yagovkina, A. B. Pevtsov Ioffe Institute, St. Petersburg
Abstract:
Amorphous nanostructured films of a complex chalcogenide (Ge$_2$Sb$_2$Te$_5$) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge$_2$Sb$_2$Te$_5$ nanoparticles in the structure of the films is 1.5–5 nm.
Received: 13.05.2014 Accepted: 20.05.2014
Citation:
D. A. Yavsin, V. M. Kozhevin, S. A. Gurevich, S. A. Yakovlev, B. T. Melekh, M. A. Yagovkina, A. B. Pevtsov, “Nanostructured Ge$_2$Sb$_2$Te$_5$ chalcogenide films produced by laser electrodispersion”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1607–1610; Semiconductors, 48:12 (2014), 1567–1570
Linking options:
https://www.mathnet.ru/eng/phts7765 https://www.mathnet.ru/eng/phts/v48/i12/p1607
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