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Fizika i Tekhnika Poluprovodnikov, 2014, Volume 48, Issue 12, Pages 1666–1670
(Mi phts7774)
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This article is cited in 9 scientific papers (total in 9 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Lasing in microdisks of ultrasmall diameter
A. E. Zhukovabc, N. V. Kryzhanovskayabc, M. V. Maksimovac, A. A. Lipovskiiac, A. V. Savel'evabc, A. A. Bogdanovac, I. I. Shostaka, È. I. Moiseeva, D. V. Karpovad, J. Laukkanend, J. Tommilae a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Saint-Petersburg Scientific Center, Russian Academy of Sciences
c Peter the Great St. Petersburg Polytechnic University
d Institute of Photonics, University of Eastern Finland,
80130 Joensuu, Finland
e Optoelectronics Research Centre, Tampere University of Technology,
33101 Tampere, Finland
Abstract:
It is demonstrated by calculations and experimental results that room-temperature lasing can be obtained at the ground-state optical transition of InAs/InGaAs/GaAs quantum dots in optical microcavities with a record-small diameter of 1.5 $\mu$m. In 1-$\mu$m cavities, lasing occurs at the wavelength of one of the whispering-gallery modes within the band corresponding to the first excited-state optical transition.
Received: 05.06.2014 Accepted: 16.06.2014
Citation:
A. E. Zhukov, N. V. Kryzhanovskaya, M. V. Maksimov, A. A. Lipovskii, A. V. Savel'ev, A. A. Bogdanov, I. I. Shostak, È. I. Moiseev, D. V. Karpov, J. Laukkanen, J. Tommila, “Lasing in microdisks of ultrasmall diameter”, Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1666–1670; Semiconductors, 48:12 (2014), 1626–1630
Linking options:
https://www.mathnet.ru/eng/phts7774 https://www.mathnet.ru/eng/phts/v48/i12/p1666
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