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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 15–17 (Mi phts7796)  
This article is cited in 2 scientific papers (total in 2 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase

A. P. Belyaeva, V. P. Rubetsa, V. V. Antipovb

a State Technological Institute of St. Petersburg (Technical University)
b Saint-Petersburg Chemical-Pharmaceutical Academy
Full-text PDF (375 kB) Citations (2)
Abstract: Structural investigation of the mechanisms of the nucleation of cadmium-sulfide and cadmiumtelluride islands on a substrate cooled to low temperatures (down to 77 K) has been performed. A distribution function, micrographs, and electron diffraction patterns are presented. A correlation between the island size and the heat of formation of the material is revealed. The results are interpreted within the model of the nucleation of 3D islands in a polymolecular adsorbate layer due to the relaxation of its chemical energy.
Received: 11.05.2012
Accepted: 21.05.2012
English version:
Semiconductors, 2013, Volume 47, Issue 1, Pages 13–15
DOI: https://doi.org/10.1134/S1063782613010065
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. P. Belyaev, V. P. Rubets, V. V. Antipov, “Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 15–17; Semiconductors, 47:1 (2013), 13–15
Citation in format AMSBIB
\Bibitem{BelRubAnt13}
\by A.~P.~Belyaev, V.~P.~Rubets, V.~V.~Antipov
\paper Influence of the nature of a condensate material on the formation of an ensemble of islands during cryochemical synthesis from the vapor phase
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 1
\pages 15--17
\mathnet{http://mi.mathnet.ru/phts7796}
\elib{https://elibrary.ru/item.asp?id=20319333}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 1
\pages 13--15
\crossref{https://doi.org/10.1134/S1063782613010065}
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  • https://www.mathnet.ru/eng/phts/v47/i1/p15
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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