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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 83–86 (Mi phts7807)  
This article is cited in 8 scientific papers (total in 8 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

P. A. Ivanova, N. D. Il'inskayaa, A. S. Potapova, T. P. Samsonovaa, A. V. Afanasyevb, V. A. Ilyinb

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (284 kB) Citations (8)
Abstract: The effect of rapid thermal annealing (temperature 600–800$^\circ$C; duration 2 min) on the forward current-voltage characteristics of 4H-SiC Schottky diodes is studied. Tungsten, nickel, chromium, and molybdenum deposited by electron-beam sputtering in vacuum are used as the Schottky-contact metals. Dissimilar types of influence exerted by the thermal treatment on the barrier height and scatter of the contact parameters, which characterize the degree of their uniformity, are found for different metals.
Received: 04.06.2012
Accepted: 11.06.2012
English version:
Semiconductors, 2013, Volume 47, Issue 1, Pages 81–84
DOI: https://doi.org/10.1134/S1063782613010132
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, N. D. Il'inskaya, A. S. Potapov, T. P. Samsonova, A. V. Afanasyev, V. A. Ilyin, “Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 83–86; Semiconductors, 47:1 (2013), 81–84
Citation in format AMSBIB
\Bibitem{IvaIliPot13}
\by P.~A.~Ivanov, N.~D.~Il'inskaya, A.~S.~Potapov, T.~P.~Samsonova, A.~V.~Afanasyev, V.~A.~Ilyin
\paper Effect of rapid thermal annealing on the current-voltage characteristics of 4\emph{H}-SiC Schottky diodes
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 1
\pages 83--86
\mathnet{http://mi.mathnet.ru/phts7807}
\elib{https://elibrary.ru/item.asp?id=20319345}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 1
\pages 81--84
\crossref{https://doi.org/10.1134/S1063782613010132}
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  • https://www.mathnet.ru/eng/phts/v47/i1/p83
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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