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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 1, Pages 137–142
(Mi phts7816)
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This article is cited in 6 scientific papers (total in 6 papers)
Semiconductor physics
Acoustoelectron interaction in quantum laser heterostructures
L. A. Kulakova, N. S. Averkiev, A. V. Lyutetskiy, V. A. Gorelov Ioffe Institute, St. Petersburg
Abstract:
The effect of ultrasonic deformation on the polarization properties of semiconductor quantum-well laser radiation is experimentally and theoretically studied at room temperature. It is shown that the observed rotation of the polarization plane is caused by mixing of the light- and heavy-hole levels in the quantum well. Data on the splitting energy of these levels are obtained. The unique capability of the ultrasonic technique for obtaining data on the value and distribution of technological strains in the heterostructure is shown.
Received: 15.05.2012 Accepted: 21.05.2012
Citation:
L. A. Kulakova, N. S. Averkiev, A. V. Lyutetskiy, V. A. Gorelov, “Acoustoelectron interaction in quantum laser heterostructures”, Fizika i Tekhnika Poluprovodnikov, 47:1 (2013), 137–142; Semiconductors, 47:1 (2013), 135–140
Linking options:
https://www.mathnet.ru/eng/phts7816 https://www.mathnet.ru/eng/phts/v47/i1/p137
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