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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2, Pages 168–173
(Mi phts7819)
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This article is cited in 3 scientific papers (total in 3 papers)
IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012
Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors
A. A. Ezhevskiia, S. A. Popkova, A. V. Soukhorukova, D. V. Guseinovb, V. A. Gavvac, A. V. Gusevc, N. V. Abrosimovd, H. Riemannd a Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Institute of Chemistry of High-Purity Substances RAS, Nizhnii Novgorod
d Leibniz Institute for Crystal Growth,
D-12489 Berlin, Germany
Abstract:
The fine structure of the spectra of a shallow-level Li donor center and a Fe$^0$ deep donor ($S$ = 1), which occupy tetrahedral interstices in a silicon lattice, is studied in monoisotopic silicon $^{28}$Si due to considerable narrowing of the lines of ESR spectra. In the case of the Li donor center, experimental data are found to confirm the role of internal strains in the crystal when observing the ESR spectra of the ground state 1$s$ $T_2$ and state $E$ at $T$ = 3.8–10 K with $g <$ 2.000. The anisotropy in the distribution of strains, which turned out to have a tetragonal type, is investigated using the angular dependences of the line width of the spin resonance corresponding to the triplet state $T_{2z}$ of Li. Similar anisotropy is found in the case of the introduction of Fe$^0$ ions into the initial crystals based on the theory of angular dependences of the width of ESR lines caused by the transitions -1 $\to$ 0 and 0 $\to$ +1 ($\Delta M_s$ = 1) in comparison with the transition -1 $\to$ +1 ($\Delta M_s$ = 2).
Received: 17.07.2012 Accepted: 20.07.2012
Citation:
A. A. Ezhevskii, S. A. Popkov, A. V. Soukhorukov, D. V. Guseinov, V. A. Gavva, A. V. Gusev, N. V. Abrosimov, H. Riemann, “Monoisotopic silicon $^{28}$Si in spin resonance spectroscopy of electrons localized at donors”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 168–173; Semiconductors, 47:2 (2013), 203–208
Linking options:
https://www.mathnet.ru/eng/phts7819 https://www.mathnet.ru/eng/phts/v47/i2/p168
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