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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2, Pages 174–177
(Mi phts7820)
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This article is cited in 1 scientific paper (total in 1 paper)
IX International Conference ''Silicon-2012'', St. Petersburg, July 9-13, 2012
Utilization of silicon detectors with “ideal-diode” current-voltage characteristics
V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskii, M. S. Lazeeva, V. V. Filimonov, E. V. Sherstnev Ioffe Institute, St. Petersburg
Abstract:
The extremely low level of intrinsic noise attained in silicon detectors with “ideal-diode” current-voltage characteristics has made it possible to create measuring circuits capable of detecting currents as low as 10$^{-16}$ A and, at the same time, featuring a dynamic range as large as 10$^{11}$ – 10$^{12}$.
Received: 17.07.2012 Accepted: 20.07.2012
Citation:
V. L. Sukhanov, P. N. Aruev, M. V. Drozdova, N. V. Zabrodskaya, V. V. Zabrodskii, M. S. Lazeeva, V. V. Filimonov, E. V. Sherstnev, “Utilization of silicon detectors with “ideal-diode” current-voltage characteristics”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 174–177; Semiconductors, 47:2 (2013), 209–212
Linking options:
https://www.mathnet.ru/eng/phts7820 https://www.mathnet.ru/eng/phts/v47/i2/p174
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