Photoresponse recovery in silicon photodiodes upon VUV irradiation

The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on $p$–$n$- and $n$–$p$ junctions a year after their irradiation at a wavelength of 121.6 nm and those based on $n$–$p$ junctions four years after their irradiation with soft X-rays. It is demonstrated that silicon photodiodes based on $p$–$n$ junctions exhibit a photoresponse recovery effect on being irradiated at a wavelength of 121.6 nm. No recovery effect is observed for silicon photodiodes based on $n$–$p$ structures.