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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 2, Pages 273–279
(Mi phts7839)
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This article is cited in 11 scientific papers (total in 11 papers)
Semiconductor physics
High-efficiency GaSb photocells
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, N. Kh. Timoshina, N. S. Potapovich, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev Ioffe Institute, St. Petersburg
Abstract:
High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the $p^+$ diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the $p$–$n$-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm$^{-2}$ have been determined.
Received: 16.07.2012 Accepted: 25.07.2012
Citation:
V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, N. Kh. Timoshina, N. S. Potapovich, B. Ya. Ber, D. Yu. Kazantsev, V. M. Andreev, “High-efficiency GaSb photocells”, Fizika i Tekhnika Poluprovodnikov, 47:2 (2013), 273–279; Semiconductors, 47:2 (2013), 307–313
Linking options:
https://www.mathnet.ru/eng/phts7839 https://www.mathnet.ru/eng/phts/v47/i2/p273
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