Thermally deposited Ag-doped CdS transistors with rare-earth oxide Nd$_2$O$_3$ as gate dielectric

The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical method. High dielectric constant rare earth oxide Nd$_2$O$_3$ has been used as gate insulator. The thin film trasistors are fabricated in coplanar electrode structure on ultrasonically cleaned glass substrates with a channel length of 50 $\mu$m. The thin film transistors exhibit a high mobility of 4.3 cm$^2$V$^{-1}$s$^{-1}$ and low threshold voltage of 1 V. The ON-OFF ratio of the thin film transistors is found as 10$^5$. The transistors also exhibit good transconductance and gain band-width product of 1.15 $\cdot$ 10$^{-3}$ mho and 71 kHz respectively.