Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 3, Pages 324–328 (Mi phts7848)  
This article is cited in 6 scientific papers (total in 6 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices

R. M. Peleshchaka, S. K. Gubab, O. V. Kuzyka, O. O. Dan’kiva, I. V. Kurilo

a Drohobych Ivan Franko State Pedagogical University
b Lviv Polytechnic National University
Full-text PDF (173 kB) Citations (6)
Abstract: The distribution of hydrostatic strains in Bi$^{3+}$-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substitutional (Bi $\to$ As) and interstitial (Bi) impurities on the quantum-dot size are derived. The qualitative correlation of the model with the experiment is discussed. The data on the effect of doping on the morphology of self-assembled InAs:Bi quantum dots in a GaAs matrix are obtained.
Received: 30.01.2012
Accepted: 06.06.2012
English version:
Semiconductors, 2013, Volume 47, Issue 3, Pages 349–353
DOI: https://doi.org/10.1134/S1063782613030196
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. M. Peleshchak, S. K. Guba, O. V. Kuzyk, O. O. Dan’kiv, I. V. Kurilo, “Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 324–328; Semiconductors, 47:3 (2013), 349–353
Citation in format AMSBIB
\Bibitem{PelGubKuz13}
\by R.~M.~Peleshchak, S.~K.~Guba, O.~V.~Kuzyk, O.~O.~Dan’kiv, I.~V.~Kurilo
\paper Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 3
\pages 324--328
\mathnet{http://mi.mathnet.ru/phts7848}
\elib{https://elibrary.ru/item.asp?id=20319386}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 3
\pages 349--353
\crossref{https://doi.org/10.1134/S1063782613030196}
Linking options:
  • https://www.mathnet.ru/eng/phts7848
  • https://www.mathnet.ru/eng/phts/v47/i3/p324
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025