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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 3, Pages 364–368
(Mi phts7855)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor physics
Features of the performance of a transient voltage suppressor in the pulsed mode
A. Z. Rahmatova, O. A. Abdulkhaevb, A. V. Karimovb, D. M. Yodgorovab a OAS "Foton", Tashkent
b Physical-Technical Institute, Uzbekistan Academy of Sciences
Abstract:
It is experimentally shown that the pulse withstand capacity of transient voltage suppressors, independent of power rating, decreases by the same law with increasing pulse duration, which indicates their optimum design parameters. The interrelation between transition times (turned on and off) and the characteristic parameters of the transient voltage suppressor structure is shown. The possibility of emitting a power fraction at the resonance frequency is an additional stimulus to increasing the withstand power.
Received: 30.01.2012 Accepted: 23.03.2012
Citation:
A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov, D. M. Yodgorova, “Features of the performance of a transient voltage suppressor in the pulsed mode”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 364–368; Semiconductors, 47:3 (2013), 387–391
Linking options:
https://www.mathnet.ru/eng/phts7855 https://www.mathnet.ru/eng/phts/v47/i3/p364
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