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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 3, Pages 426–431 (Mi phts7866)  
This article is cited in 7 scientific papers (total in 7 papers)

Manufacturing, processing, testing of materials and structures

The mechanism of contact-resistance formation on lapped $n$-Si surfaces

A. V. Sachenkoa, A. E. Belyaeva, N. S. Boltovetsb, A. O. Vinogradova, L. M. Kapitanchukc, R. V. Konakovaa, V. P. Kostylyova, Ya. Ya. Kudryka, V. P. Klad'koa, V. N. Sheremeta

a Institute of Semiconductor Physics NAS, Kiev
b State Enterprise Research Institute "Orion", Kyiv, 03057, Ukraine
c E. O. Paton Electric Welding Institute, National Academy of Sciences of Ukraine
Full-text PDF (528 kB) Citations (7)
Abstract: Anomalous temperature dependences of the specific contact resistance $\rho_c(T)$ of Pd$_2$S–Ti–Au ohmic contacts to lapped $n$-Si with dopant concentrations of 5 $\times$ 10$^{16}$, 3 $\times$ 10$^{17}$, and 8 $\times$ 10$^{17}$ cm$^{-3}$ have been obtained. The anomalous dependences of $\rho_c(T)$ have been accounted for under the assumption that the current flows along nanodimensional metallic shunts, which are combined with dislocations with a diffusionrelated limit in the supply of charge carriers taken into account. The densities of conducting and scattering dislocations in the surface region of the semiconductor are determined.
Received: 16.07.2012
Accepted: 25.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 3, Pages 449–454
DOI: https://doi.org/10.1134/S1063782613030238
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Sachenko, A. E. Belyaev, N. S. Boltovets, A. O. Vinogradov, L. M. Kapitanchuk, R. V. Konakova, V. P. Kostylyov, Ya. Ya. Kudryk, V. P. Klad'ko, V. N. Sheremet, “The mechanism of contact-resistance formation on lapped $n$-Si surfaces”, Fizika i Tekhnika Poluprovodnikov, 47:3 (2013), 426–431; Semiconductors, 47:3 (2013), 449–454
Citation in format AMSBIB
\Bibitem{SacBelBol13}
\by A.~V.~Sachenko, A.~E.~Belyaev, N.~S.~Boltovets, A.~O.~Vinogradov, L.~M.~Kapitanchuk, R.~V.~Konakova, V.~P.~Kostylyov, Ya.~Ya.~Kudryk, V.~P.~Klad'ko, V.~N.~Sheremet
\paper The mechanism of contact-resistance formation on lapped $n$-Si surfaces
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 3
\pages 426--431
\mathnet{http://mi.mathnet.ru/phts7866}
\elib{https://elibrary.ru/item.asp?id=20319404}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 3
\pages 449--454
\crossref{https://doi.org/10.1134/S1063782613030238}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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