|
|
Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 466–472
(Mi phts7872)
|
|
|
|
Semiconductor structures, low-dimensional systems, quantum phenomena
Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells
V. Ya. Aleshkin, D. I. Burdeiny Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The characteristics of the Coulomb scattering of conduction electrons at shallow donor centers in Al$_x$Ga$_{1-x}$As/$n$-GaAs/Al$_x$Ga$_{1-x}$As quantum well heterostructures are studied theoretically with consideration for the influence of resonance states. The resonance states emerge below the excited quantum-confinement subbands because of the presence of donors. It is found that the spectra of total and transport Coulomb-scattering cross sections exhibit asymmetric resonance features in the vicinity of resonance energies. It is shown that these features do not exhibit a small effect: in the vicinity of resonance energies, the cross sections can differ from the corresponding quantities in the nonresonance case several times.
Received: 28.04.2012 Accepted: 30.05.2012
Citation:
V. Ya. Aleshkin, D. I. Burdeiny, “Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 466–472; Semiconductors, 47:4 (2013), 487–493
Linking options:
https://www.mathnet.ru/eng/phts7872 https://www.mathnet.ru/eng/phts/v47/i4/p466
|
|