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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 466–472 (Mi phts7872)  

Semiconductor structures, low-dimensional systems, quantum phenomena

Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells

V. Ya. Aleshkin, D. I. Burdeiny

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract: The characteristics of the Coulomb scattering of conduction electrons at shallow donor centers in Al$_x$Ga$_{1-x}$As/$n$-GaAs/Al$_x$Ga$_{1-x}$As quantum well heterostructures are studied theoretically with consideration for the influence of resonance states. The resonance states emerge below the excited quantum-confinement subbands because of the presence of donors. It is found that the spectra of total and transport Coulomb-scattering cross sections exhibit asymmetric resonance features in the vicinity of resonance energies. It is shown that these features do not exhibit a small effect: in the vicinity of resonance energies, the cross sections can differ from the corresponding quantities in the nonresonance case several times.
Received: 28.04.2012
Accepted: 30.05.2012
English version:
Semiconductors, 2013, Volume 47, Issue 4, Pages 487–493
DOI: https://doi.org/10.1134/S1063782613040027
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, D. I. Burdeiny, “Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 466–472; Semiconductors, 47:4 (2013), 487–493
Citation in format AMSBIB
\Bibitem{AleBur13}
\by V.~Ya.~Aleshkin, D.~I.~Burdeiny
\paper Resonance Coulomb scattering at shallow donors in AlGaAs/$n$-GaAs/AlGaAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 4
\pages 466--472
\mathnet{http://mi.mathnet.ru/phts7872}
\elib{https://elibrary.ru/item.asp?id=20319410}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 4
\pages 487--493
\crossref{https://doi.org/10.1134/S1063782613040027}
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