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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 493–502 (Mi phts7876)  
This article is cited in 8 scientific papers (total in 8 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities

M. V. Beznogovab, R. A. Surisab

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
Full-text PDF (360 kB) Citations (8)
Abstract: A new unified approach to the description of ballistic unipolar-injection currents is proposed for nanostructures of different dimensionalities. It is shown that in the case of three-dimensional (3D), two-dimensional (2D), and one-dimensional (1D) structures the problem can be reduced to a nonlinear integral equation with a dimensionless parameter determining the coefficient of the universal current-voltage characteristic. The existence of a maximum for this parameter, which is analogous to the Bursian limit for a vacuum diode, is proven for each dimensionality. The current-voltage characteristics and the potential and charge distributions are calculated for 3D, 2D, and 1D structures.
Received: 11.10.2012
Accepted: 15.10.2012
English version:
Semiconductors, 2013, Volume 47, Issue 4, Pages 514–524
DOI: https://doi.org/10.1134/S1063782613040052
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. V. Beznogov, R. A. Suris, “Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 493–502; Semiconductors, 47:4 (2013), 514–524
Citation in format AMSBIB
\Bibitem{BezSur13}
\by M.~V.~Beznogov, R.~A.~Suris
\paper Theory of space-charge-limited ballistic currents in nanostructures of different dimensionalities
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 4
\pages 493--502
\mathnet{http://mi.mathnet.ru/phts7876}
\elib{https://elibrary.ru/item.asp?id=20319414}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 4
\pages 514--524
\crossref{https://doi.org/10.1134/S1063782613040052}
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  • https://www.mathnet.ru/eng/phts/v47/i4/p493
    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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