Structural and optical properties of thin In$_2$O$_3$ films produced by autowave oxidation

Cubic-phase In$_2$O$_3$ films are produced by the autowave oxidation reaction. Electron microscopy and photoelectron spectroscopy of the atomic profiles show that the samples are homogeneous over the entire area and throughout the thickness, with the typical grain size being 20–40 nm. The optical and electrical properties are studied for In$_2$O$_3$ films fabricated at different pressures in the vacuum chamber. In the wave-length range from 400 to 1100 nm, the transparency of the films was higher than 85%; the resistivity of the films was 1.8 $\times$ 10$^{-2}$ $\Omega$ cm.