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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 4, Pages 564–569 (Mi phts7886)  
This article is cited in 18 scientific papers (total in 18 papers)

Manufacturing, processing, testing of materials and structures

Synthesis and characterization of nanostructured zinc oxide layers for sensor applications

L. K. Krastevaa, D. Ts. Dimitrova, K. I. Papazovaa, N. K. Nikolaeva, T. V. Peshkovaa, V. A. Moshnikovb, I. E. Grachevab, S. S. Karpovab, N. V. Kanevaa

a University of Sofia, 1164, Sofia, Bulgaria
b Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (815 kB) Citations (18)
Abstract: Fractal structures and arrays of nanowires based on zinc oxide are fabricated by two different methods, sol-gel dip-coating and chemical bath deposition combined with sol-gel synthesis. The gas-sensitive properties of the structures are analyzed. It is found that the greatest sensitivity to reducing ethanol vapor is exhibited by the structure with a lower layer in the form of an array of zinc-oxide nanowires modified by four immersions in a copper nitrate solution.
Received: 17.07.2012
Accepted: 25.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 4, Pages 586–591
DOI: https://doi.org/10.1134/S1063782613040155
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. K. Krasteva, D. Ts. Dimitrov, K. I. Papazova, N. K. Nikolaev, T. V. Peshkova, V. A. Moshnikov, I. E. Gracheva, S. S. Karpova, N. V. Kaneva, “Synthesis and characterization of nanostructured zinc oxide layers for sensor applications”, Fizika i Tekhnika Poluprovodnikov, 47:4 (2013), 564–569; Semiconductors, 47:4 (2013), 586–591
Citation in format AMSBIB
\Bibitem{KraDimPap13}
\by L.~K.~Krasteva, D.~Ts.~Dimitrov, K.~I.~Papazova, N.~K.~Nikolaev, T.~V.~Peshkova, V.~A.~Moshnikov, I.~E.~Gracheva, S.~S.~Karpova, N.~V.~Kaneva
\paper Synthesis and characterization of nanostructured zinc oxide layers for sensor applications
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 4
\pages 564--569
\mathnet{http://mi.mathnet.ru/phts7886}
\elib{https://elibrary.ru/item.asp?id=20319425}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 4
\pages 586--591
\crossref{https://doi.org/10.1134/S1063782613040155}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v47/i4/p564
    • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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