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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 626–632 (Mi phts7898)  
This article is cited in 4 scientific papers (total in 4 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods

A. E. Berdnikov, V. N. Gusev, A. A. Mironenko, A. A. Popov, A. V. Perminov, A. S. Rudyi, V. D. Chernomordik

Yaroslavl branch of the Institute of physics and technology, Institution of Russian academy of sciences
Full-text PDF (288 kB) Citations (4)
Abstract: The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particles of other materials with narrower band gaps present. It is found that such structures possess the property of bipolar conductivity switching. The MIS structures with a multilayer insulator containing additional nanoscale siliconnitride layers exhibit the best characteristics of the conductivity switching effect.
Received: 25.06.2012
Accepted: 25.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 5, Pages 641–646
DOI: https://doi.org/10.1134/S1063782613050072
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. E. Berdnikov, V. N. Gusev, A. A. Mironenko, A. A. Popov, A. V. Perminov, A. S. Rudyi, V. D. Chernomordik, “Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 626–632; Semiconductors, 47:5 (2013), 641–646
Citation in format AMSBIB
\Bibitem{BerGusMir13}
\by A.~E.~Berdnikov, V.~N.~Gusev, A.~A.~Mironenko, A.~A.~Popov, A.~V.~Perminov, A.~S.~Rudyi, V.~D.~Chernomordik
\paper Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 5
\pages 626--632
\mathnet{http://mi.mathnet.ru/phts7898}
\elib{https://elibrary.ru/item.asp?id=20319437}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 5
\pages 641--646
\crossref{https://doi.org/10.1134/S1063782613050072}
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  • https://www.mathnet.ru/eng/phts/v47/i5/p626
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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