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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 637–641
(Mi phts7900)
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This article is cited in 15 scientific papers (total in 15 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Conductivity of nanocrystalline ZnO(Ga)
N. A. Vorob'evaa, M. N. Rumyantsevaa, P. A. Forshb, A. M. Gaskova a Lomonosov Moscow State University, Faculty of Chemistry
b Lomonosov Moscow State University, Faculty of Physics
Abstract:
Nanocrystalline zinc-oxide powders containing different proportions of gallium, ZnO(Ga), are synthesized by coprecipitation from aqueous solutions followed by annealing at 250$^\circ$C. The dependence of the conductance of the samples on the Ga content is found to be non-monotonous. The temperature dependences of the conductance are studied. The introduction of a low Ga content (0.33–0.50 at%) induces a decrease in the activation energy and the height of the effective potential barrier between nanocrystallites compared to the corresponding parameters of ZnO. Then, as the Ga content is increased, these parameters increase. The data obtained in the study are interpreted within the context of the model of an inhomogeneous semiconductor with large-scale potential fluctuations.
Received: 23.07.2012 Accepted: 13.08.2012
Citation:
N. A. Vorob'eva, M. N. Rumyantseva, P. A. Forsh, A. M. Gaskov, “Conductivity of nanocrystalline ZnO(Ga)”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 637–641; Semiconductors, 47:5 (2013), 650–654
Linking options:
https://www.mathnet.ru/eng/phts7900 https://www.mathnet.ru/eng/phts/v47/i5/p637
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