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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 652–657
(Mi phts7904)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Effect of a weak magnetic field on the micromechanical and electrical properties of silicon for use in solar power engineering
V. A. Makara, O. A. Korotchenkov, L. P. Steblenko, A. A. Podolyan, D. V. Kalinichenko National Taras Shevchenko University of Kyiv
Abstract:
The effect of a dc magnetic field (0.17 T) on the microhardness and photoconductivity decay kinetics in silicon crystals used in solar power engineering is studied. Variations in the micromechanical and electrical properties in the samples under study are considered to be functions of the time after completing the magnetic treatment. The results are discussed from the standpoint of magnetic-field-enhanced processes in a subsystem of structural defects.
Received: 08.12.2012 Accepted: 25.04.2012
Citation:
V. A. Makara, O. A. Korotchenkov, L. P. Steblenko, A. A. Podolyan, D. V. Kalinichenko, “Effect of a weak magnetic field on the micromechanical and electrical properties of silicon for use in solar power engineering”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 652–657; Semiconductors, 47:5 (2013), 665–669
Linking options:
https://www.mathnet.ru/eng/phts7904 https://www.mathnet.ru/eng/phts/v47/i5/p652
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