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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 675–683 (Mi phts7907)  
This article is cited in 28 scientific papers (total in 28 papers)

Semiconductor physics

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

M. I. Vexlera, S. È. Tyaginovab, Yu. Yu. Illarionovac, Yew Kwang Singd, Ang Diing Shenpd, V. V. Fedorova, D. V. Isakovc

a Ioffe Institute, St. Petersburg
b TU Vienna, Institute for Mictroelectronics, 1040 Wien, Austria
c Singapore Institute of Manufacturing Technology, 638075 Singapore
d Nanyang Technological University, 639798 Singapore
Full-text PDF (916 kB) Citations (28)
Abstract: The algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the measurement data obtained by the authors and borrowed from the literature, for several different structures. The presented information is supposed to suffice for calculating the electrical characteristics of the investigated structures with the various combinations of materials: metal or polysilicon gate, single-layer or stacked insulator, and semiconductor with any doping type and level.
Received: 06.08.2012
Accepted: 28.08.2012
English version:
Semiconductors, 2013, Volume 47, Issue 5, Pages 686–694
DOI: https://doi.org/10.1134/S1063782613050230
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. I. Vexler, S. È. Tyaginov, Yu. Yu. Illarionov, Yew Kwang Sing, Ang Diing Shenp, V. V. Fedorov, D. V. Isakov, “A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 675–683; Semiconductors, 47:5 (2013), 686–694
Citation in format AMSBIB
\Bibitem{VexTyaIll13}
\by M.~I.~Vexler, S.~\`E.~Tyaginov, Yu.~Yu.~Illarionov, Yew~Kwang~Sing, Ang~Diing~Shenp, V.~V.~Fedorov, D.~V.~Isakov
\paper A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 5
\pages 675--683
\mathnet{http://mi.mathnet.ru/phts7907}
\elib{https://elibrary.ru/item.asp?id=20319446}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 5
\pages 686--694
\crossref{https://doi.org/10.1134/S1063782613050230}
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  • https://www.mathnet.ru/eng/phts/v47/i5/p675
    • This publication is cited in the following 28 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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