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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 684–689
(Mi phts7908)
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Semiconductor physics
High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator
A. M. Nadtochiyab, W. Hofmannc, T. D. Germannc, S. A. Blokhinabd, L. Ya. Karachinskyabd, M. V. Maksimovab, V. A. Shchukinae, A. E. Zhukovb, D. Bimbergc a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Institut fur Festkorperphysik, Technische Universitat Berlin,
10623 Berlin, German
d Connector Optics LLC, St. Petersburg
e VI Systems GmbH,
10623 Berlin, Germany
Abstract:
The high-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator are studied using small-signal modulation analysis of the electroreflectance. The experimental data obtained are approximated using the suggested equivalent electrical circuit, which accounts for the formation of a nonequilibrium space charge in the carrier-depletion region of the modulator. The bandwidth of the high-frequency electrical-signal transfer to the electro-optical region, determined for the suggested equivalent electrical circuit of the modulator, is shown to be 3GHz.
Citation:
A. M. Nadtochiy, W. Hofmann, T. D. Germann, S. A. Blokhin, L. Ya. Karachinsky, M. V. Maksimov, V. A. Shchukin, A. E. Zhukov, D. Bimberg, “High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 684–689; Semiconductors, 47:5 (2013), 695–700
Linking options:
https://www.mathnet.ru/eng/phts7908 https://www.mathnet.ru/eng/phts/v47/i5/p684
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