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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 5, Pages 696–701 (Mi phts7910)  
This article is cited in 6 scientific papers (total in 6 papers)

Manufacturing, processing, testing of materials and structures

Ionic conductivity and dielectric relaxation in $\gamma$-irradiated TlGaTe$_2$ crystals

R. M. Sardarlya, O. A. Samedova, A. P. Abdullayeva, E. K. Huseynovb, F. T. Salmanova, N. A. Aliyevaa, R. Sh. Agaevaa

a Institute of radiation problems, ANAS
b Institute of Physics Azerbaijan Academy of Sciences
Full-text PDF (384 kB) Citations (6)
Abstract: The switching effect, field and temperature dependences of the permittivity and conductivity of TlGaTe$_2$ crystals subjected to various $\gamma$-irradiation doses are studied. Under rather low electric fields, the phenomenon of threshold switching with an $S$-shaped current-voltage characteristic containing a portion with negative differential resistance is observed in the crystals. In the region of critical voltages, current and voltage oscillations and imposed modulation are observed. Possible mechanisms of switching, ionic conductivity, disorder, and electrical instability in TlGaTe$_2$ crystals are discussed.
Received: 03.04.2012
Accepted: 09.04.2012
English version:
Semiconductors, 2013, Volume 47, Issue 5, Pages 707–712
DOI: https://doi.org/10.1134/S1063782613050199
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. M. Sardarly, O. A. Samedov, A. P. Abdullayev, E. K. Huseynov, F. T. Salmanov, N. A. Aliyeva, R. Sh. Agaeva, “Ionic conductivity and dielectric relaxation in $\gamma$-irradiated TlGaTe$_2$ crystals”, Fizika i Tekhnika Poluprovodnikov, 47:5 (2013), 696–701; Semiconductors, 47:5 (2013), 707–712
Citation in format AMSBIB
\Bibitem{SarSamAbd13}
\by R.~M.~Sardarly, O.~A.~Samedov, A.~P.~Abdullayev, E.~K.~Huseynov, F.~T.~Salmanov, N.~A.~Aliyeva, R.~Sh.~Agaeva
\paper Ionic conductivity and dielectric relaxation in $\gamma$-irradiated TlGaTe$_2$ crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 5
\pages 696--701
\mathnet{http://mi.mathnet.ru/phts7910}
\elib{https://elibrary.ru/item.asp?id=20319449}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 5
\pages 707--712
\crossref{https://doi.org/10.1134/S1063782613050199}
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  • https://www.mathnet.ru/eng/phts/v47/i5/p696
    • This publication is cited in the following 6 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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