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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 732–736
(Mi phts7916)
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This article is cited in 5 scientific papers (total in 5 papers)
Electronic properties of semiconductors
Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO$_3$
I. R. Shein, A. L. Ivanovskii Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Ekaterinburg
Abstract:
Within electron density functional theory with the use of the Vienna ab-initio simulation package (VASP), the effect of the $sp$ substitutional impurities of fluorine ($n$-type dopant), nitrogen, and carbon ($p$-type dopants) on the electronic and magnetic properties of tungsten trioxide WO$_3$ is studied. It is established that these impurities induce the transformation of tungsten trioxide (nonmagnetic semiconductor) into nonmagnetic metal (WO$_3$:F), magnetic semimetal (WO$_3$:N), or magnetic metal (WO$_3$:C) states.
Received: 09.06.2012 Accepted: 10.09.2012
Citation:
I. R. Shein, A. L. Ivanovskii, “Effect of fluorine, nitrogen, and carbon impurities on the electronic and magnetic properties of WO$_3$”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 732–736; Semiconductors, 47:6 (2013), 740–744
Linking options:
https://www.mathnet.ru/eng/phts7916 https://www.mathnet.ru/eng/phts/v47/i6/p732
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