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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 737–739 (Mi phts7917)  
Electronic properties of semiconductors

Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors

P. I. Baranskya, G. P. Gaidarb

a Institute of Semiconductor Physics NAS, Kiev
b Institute for Nuclear Research of the National Academy of Sciences of Ukrainian
Full-text PDF (204 kB)
Abstract: A method for determination of the degree of compensation $k = N_a /N_d$ for shallow impurities in $n$-Si crystals with a nondegenerate electron gas is suggested. Data facilitating practical determination of the degree of compensation are given.
Received: 15.03.2012
Accepted: 19.09.2012
English version:
Semiconductors, 2013, Volume 47, Issue 6, Pages 745–748
DOI: https://doi.org/10.1134/S1063782613060031
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. I. Baransky, G. P. Gaidar, “Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 737–739; Semiconductors, 47:6 (2013), 745–748
Citation in format AMSBIB
\Bibitem{BarGai13}
\by P.~I.~Baransky, G.~P.~Gaidar
\paper Method for determination of the degree of compensation for electrically active impurities in multivalley semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 6
\pages 737--739
\mathnet{http://mi.mathnet.ru/phts7917}
\elib{https://elibrary.ru/item.asp?id=20319456}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 6
\pages 745--748
\crossref{https://doi.org/10.1134/S1063782613060031}
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