Electrical properties of silicon Schottky diodes containing metal films of various compositions

Au$_x$Ti$_{100-x}$/$n$-Si Schottky diodes are fabricated and studied; in addition, the electrical properties of diodes containing metal films with varying composition ($x$ = 0, 14, 30, 38, 60, 80, and 100) are also studied. Using X-ray phase analysis, it is established that the film of Au$_{38}$Ti$_{62}$ composition has the amorphous structure, while the remaining films Au$_x$Ti$_{100-x}$ possess the polycrystalline structure. The main parameters of the Schottky diodes are determined in relation to the composition and structure of the metal films. As a result, it is shown that the electrical properties of Au$_x$Ti$_{100-x}$/$n$-Si Schottky diodes are related to variations in the composition and structure of metal films.