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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 772–776
(Mi phts7924)
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This article is cited in 2 scientific papers (total in 2 papers)
Surface, interfaces, thin films
Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing
S. V. Tomilin, A. S. Yanovskii, O. A. Tomilina, G. R. Mikaelyan Zaporizhzhya National University
Abstract:
The I–V characteristics of nanostructured Pd films on a Si substrate are investigated. The nanostructures (nanoislands) are formed by the vacuum annealing of continuous ultrathin Pd films sputtered onto a substrate. The shape of the I–V characteristics of the investigated Si substrate-Pd film system is shown to be heavily dependent on the degree of film nanostructuring. The surface morphology of the films is studied using scanning electron microscopy.
Received: 06.08.2012 Accepted: 28.08.2012
Citation:
S. V. Tomilin, A. S. Yanovskii, O. A. Tomilina, G. R. Mikaelyan, “Study of the I–V characteristics of nanostructured Pd films on a Si substrate after vacuum annealing”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 772–776; Semiconductors, 47:6 (2013), 782–786
Linking options:
https://www.mathnet.ru/eng/phts7924 https://www.mathnet.ru/eng/phts/v47/i6/p772
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