Charge transport mechanisms in anisotype $n$-ТiО$_2$/$p$-Si heterostructures

Anisotype $n$-ТiО$_2$/$p$-Si heterojunctions are fabricated by the deposition of a TiO$_2$ film on a polished poly-Si substrate using magnetron sputtering. The electrical properties of the heterojunctions are investigated and the dominant charge transport mechanisms are established; these are multi-step tunneling recombination via surface states at the metallurgical TiO$_2$/Si interface at low forward biases $V$ and tunneling at $V>$ 0.6 V. The reverse current through the heterojunctions under study is analyzed within the tunneling mechanism.