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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 793–796
(Mi phts7928)
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This article is cited in 2 scientific papers (total in 2 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well
S. M. Seid-Rzaeva Institute of Physics Azerbaijan Academy of Sciences
Abstract:
The energy relaxation processes of excess electrons on the surface of a semiconductor nanotube are studied. A general analytical expression for the relaxation time of the energy of nonequilibrium electrons is derived taking into account possible intersubband transitions at an arbitrary ratio of nanotube and polaron radii $r_0/r_p$. Numerical calculations for GaAs semiconductor nanotube are performed.
Received: 25.06.2012 Accepted: 28.08.2012
Citation:
S. M. Seid-Rzaeva, “Energy relaxation of nonequilibrium electrons in a nanotube formed by a rolled-up quantum well”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 793–796; Semiconductors, 47:6 (2013), 804–807
Linking options:
https://www.mathnet.ru/eng/phts7928 https://www.mathnet.ru/eng/phts/v47/i6/p793
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