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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 797–801 (Mi phts7929)  
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Photovoltaic properties of GaAs:Be nanowire arrays

A. D. Bouravlevabc, D. V. Beznasyukab, E. P. Gilsteina, M. Tchernychevad, A. De Luna Bugallod, L. Riguttid, L. Yue, Yu. Proskuryakovf, I. V. Shtromb, M. A. Timofeevab, Yu. B. Samsonenkoabc, A. I. Khrebtova, G. È. Cirlinabc

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Institut d’Electronique Fondamentale UMR CNRS 8622, University Paris Sud 11, 91405 Orsay Cedex, France
e Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique, CNRS, 91128 Palaiseau, France
f Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool, L69 7ZF, United Kingdom
Full-text PDF (743 kB) Citations (3)
Abstract: Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the $p$-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.
Received: 01.11.2012
Accepted: 08.11.2012
English version:
Semiconductors, 2013, Volume 47, Issue 6, Pages 808–811
DOI: https://doi.org/10.1134/S1063782613060079
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. D. Bouravlev, D. V. Beznasyuk, E. P. Gilstein, M. Tchernycheva, A. De Luna Bugallo, L. Rigutti, L. Yu, Yu. Proskuryakov, I. V. Shtrom, M. A. Timofeeva, Yu. B. Samsonenko, A. I. Khrebtov, G. È. Cirlin, “Photovoltaic properties of GaAs:Be nanowire arrays”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 797–801; Semiconductors, 47:6 (2013), 808–811
Citation in format AMSBIB
\Bibitem{BouBezGil13}
\by A.~D.~Bouravlev, D.~V.~Beznasyuk, E.~P.~Gilstein, M.~Tchernycheva, A.~De Luna Bugallo, L.~Rigutti, L.~Yu, Yu.~Proskuryakov, I.~V.~Shtrom, M.~A.~Timofeeva, Yu.~B.~Samsonenko, A.~I.~Khrebtov, G.~\`E.~Cirlin
\paper Photovoltaic properties of GaAs:Be nanowire arrays
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 6
\pages 797--801
\mathnet{http://mi.mathnet.ru/phts7929}
\elib{https://elibrary.ru/item.asp?id=20319468}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 6
\pages 808--811
\crossref{https://doi.org/10.1134/S1063782613060079}
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  • https://www.mathnet.ru/eng/phts/v47/i6/p797
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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