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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 802–804 (Mi phts7930)  
This article is cited in 14 scientific papers (total in 14 papers)

Carbon systems

Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6H-SiC substrates

R. V. Konakovaa, A. F. Kolomysa, O. B. Okhrimenkoa, V. V. Strel'chuka, E. Yu. Volkovb, M. N. Grigor'evb, A. M. Svetlichnyib, O. B. Spiridonovb

a Institute of Semiconductor Physics NAS, Kiev
b Taganrog Technological Institute of Southern Federal University
Full-text PDF (326 kB) Citations (14)
Abstract: The raman scattering (RS) spectra of graphene on semi-insulating and conductive 6H-SiC substrates formed by preliminary and additional annealing of silicon carbide at various temperatures are studied. The degree of perfection of the graphene films and sizes of its clusters are estimated. It is shown that the temperature of additional annealing in the case of conductive substrates should be higher than that for semi-insulating substrates to obtain graphene layers with the same structural perfection.
Received: 18.07.2012
Accepted: 20.08.2012
English version:
Semiconductors, 2013, Volume 47, Issue 6, Pages 812–814
DOI: https://doi.org/10.1134/S1063782613060134
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Konakova, A. F. Kolomys, O. B. Okhrimenko, V. V. Strel'chuk, E. Yu. Volkov, M. N. Grigor'ev, A. M. Svetlichnyi, O. B. Spiridonov, “Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6H-SiC substrates”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 802–804; Semiconductors, 47:6 (2013), 812–814
Citation in format AMSBIB
\Bibitem{KonKolOkh13}
\by R.~V.~Konakova, A.~F.~Kolomys, O.~B.~Okhrimenko, V.~V.~Strel'chuk, E.~Yu.~Volkov, M.~N.~Grigor'ev, A.~M.~Svetlichnyi, O.~B.~Spiridonov
\paper Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6\emph{H}-SiC substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 6
\pages 802--804
\mathnet{http://mi.mathnet.ru/phts7930}
\elib{https://elibrary.ru/item.asp?id=20319469}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 6
\pages 812--814
\crossref{https://doi.org/10.1134/S1063782613060134}
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  • https://www.mathnet.ru/eng/phts/v47/i6/p802
    • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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