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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 838–844
(Mi phts7938)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
DLTS Study of plastically deformed copper-doped $n$-type germanium
S. A. Shevchenko, A. I. Kolyubakin Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Abstract:
Classical deep level transient spectroscopy (DLTS) and its modification are used to study the time constants of electron capture by substitutional Cu$_s^{2-}$ atoms and thermal electron emission from Cu$_s^{3-}$ atoms in plastically deformed Cu-doped $n$-type germanium. The activation energy $E_\sigma$, the electron capture cross-section, the energy $E_3$ of the third acceptor level of Cu$_s^{3-}$ atoms, and the ionization entropy are determined. The lack of $E_3$-level broadening, the exponential capture kinetics for a filling-pulse duration of $t_p\lesssim$ 1 ms, the fact that the Cu$_s^{2-/3-}$-atom recombination parameters are independent of the dislocation density, and the low concentration of Cu$_s^{2-/3-}$ atoms in the deformed samples suggest that the DLTS spectra are due to Cu$_s^{2-/3-}$ atoms located outside the Read cylinders.
Received: 25.06.2012 Accepted: 20.07.2012
Citation:
S. A. Shevchenko, A. I. Kolyubakin, “DLTS Study of plastically deformed copper-doped $n$-type germanium”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 838–844; Semiconductors, 47:6 (2013), 849–855
Linking options:
https://www.mathnet.ru/eng/phts7938 https://www.mathnet.ru/eng/phts/v47/i6/p838
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