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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 6, Pages 838–844 (Mi phts7938)  

This article is cited in 1 scientific paper (total in 1 paper)

Manufacturing, processing, testing of materials and structures

DLTS Study of plastically deformed copper-doped $n$-type germanium

S. A. Shevchenko, A. I. Kolyubakin

Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
Full-text PDF (331 kB) Citations (1)
Abstract: Classical deep level transient spectroscopy (DLTS) and its modification are used to study the time constants of electron capture by substitutional Cu$_s^{2-}$ atoms and thermal electron emission from Cu$_s^{3-}$ atoms in plastically deformed Cu-doped $n$-type germanium. The activation energy $E_\sigma$, the electron capture cross-section, the energy $E_3$ of the third acceptor level of Cu$_s^{3-}$ atoms, and the ionization entropy are determined. The lack of $E_3$-level broadening, the exponential capture kinetics for a filling-pulse duration of $t_p\lesssim$ 1 ms, the fact that the Cu$_s^{2-/3-}$-atom recombination parameters are independent of the dislocation density, and the low concentration of Cu$_s^{2-/3-}$ atoms in the deformed samples suggest that the DLTS spectra are due to Cu$_s^{2-/3-}$ atoms located outside the Read cylinders.
Received: 25.06.2012
Accepted: 20.07.2012
English version:
Semiconductors, 2013, Volume 47, Issue 6, Pages 849–855
DOI: https://doi.org/10.1134/S1063782613060250
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Shevchenko, A. I. Kolyubakin, “DLTS Study of plastically deformed copper-doped $n$-type germanium”, Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 838–844; Semiconductors, 47:6 (2013), 849–855
Citation in format AMSBIB
\Bibitem{SheKol13}
\by S.~A.~Shevchenko, A.~I.~Kolyubakin
\paper DLTS Study of plastically deformed copper-doped $n$-type germanium
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 6
\pages 838--844
\mathnet{http://mi.mathnet.ru/phts7938}
\elib{https://elibrary.ru/item.asp?id=20319477}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 6
\pages 849--855
\crossref{https://doi.org/10.1134/S1063782613060250}
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  • https://www.mathnet.ru/eng/phts/v47/i6/p838
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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