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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 865–868
(Mi phts7942)
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This article is cited in 3 scientific papers (total in 3 papers)
Non-electronic properties of semiconductors (atomic structure, diffusion)
Formation of structures with noncatalytic CdTe nanowires
I. P. Sotnikovabc, V. A. Petrova, Yu. Yu. Proskuryakovd, D. A. Kudriashovab, A. V. Nashchekinb, G. È. Cirlinabc, R. Treharned, K. Durosed a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d University of Liverpool,
L69 3BX Liverpool, United Kingdom
Abstract:
The processes of the noncatalytic synthesis of structures with CdTe nanowires by magnetron sputtering deposition are studied. It is shown that the deposition of magnetron sputtered CdTe onto substrates covered by a porous SiO$_2$ layer can result in CdTe nanowires formation. The porosity of SiO$_2$ layers with thicknesses from 2 to 15 nm fabricated by magnetron sputtering deposition is estimated.
Received: 20.11.2012 Accepted: 30.11.2012
Citation:
I. P. Sotnikov, V. A. Petrov, Yu. Yu. Proskuryakov, D. A. Kudriashov, A. V. Nashchekin, G. È. Cirlin, R. Treharne, K. Durose, “Formation of structures with noncatalytic CdTe nanowires”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 865–868; Semiconductors, 47:7 (2013), 875–878
Linking options:
https://www.mathnet.ru/eng/phts7942 https://www.mathnet.ru/eng/phts/v47/i7/p865
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