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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 890–898 (Mi phts7946)  
This article is cited in 3 scientific papers (total in 3 papers)

Electronic properties of semiconductors

New acceptor centers of the background impurities in $p$-CdZnTe

S. V. Plyatsko, L. V. Rashkovetskyi

Institute of Semiconductor Physics NAS, Kiev
Full-text PDF (454 kB) Citations (3)
Abstract: Low-temperature photoluminescence data are used to study the redistribution of the background impurities and host components of $p$-CdZnTe single crystals with a resistivity of 1–50 $\Omega$ cm upon their interaction with infrared laser radiation. The effect of widening of the band gap and the formation of new acceptor centers in response to laser-stimulated changes in the system of intrinsic defects are established. The activation energy of the new acceptor centers is determined.
Received: 24.05.2012
Accepted: 19.10.2012
English version:
Semiconductors, 2013, Volume 47, Issue 7, Pages 899–907
DOI: https://doi.org/10.1134/S1063782613070191
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Plyatsko, L. V. Rashkovetskyi, “New acceptor centers of the background impurities in $p$-CdZnTe”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 890–898; Semiconductors, 47:7 (2013), 899–907
Citation in format AMSBIB
\Bibitem{PlyRas13}
\by S.~V.~Plyatsko, L.~V.~Rashkovetskyi
\paper New acceptor centers of the background impurities in $p$-CdZnTe
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 7
\pages 890--898
\mathnet{http://mi.mathnet.ru/phts7946}
\elib{https://elibrary.ru/item.asp?id=20319485}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 7
\pages 899--907
\crossref{https://doi.org/10.1134/S1063782613070191}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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