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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 962–969 (Mi phts7971)  

This article is cited in 16 scientific papers (total in 16 papers)

Semiconductor physics

Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots

A. G. Vitukhnovskya, A. A. Vashchenkoa, V. S. Lebedevab, R. B. Vasilievc, P. N. Brunkovde, D. N. Bychkovskiie

a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Engineering Physics Institute (State University)
c Lomonosov Moscow State University
d Ioffe Institute, St. Petersburg
e Optogan-OLS, St. Petersburg, 198205, Russia
Abstract: The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.
Received: 24.09.2012
Accepted: 24.09.2012
English version:
Semiconductors, 2013, Volume 47, Issue 7, Pages 971–977
DOI: https://doi.org/10.1134/S1063782613070245
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. G. Vitukhnovsky, A. A. Vashchenko, V. S. Lebedev, R. B. Vasiliev, P. N. Brunkov, D. N. Bychkovskii, “Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 962–969; Semiconductors, 47:7 (2013), 971–977
Citation in format AMSBIB
\Bibitem{VitVasLeb13}
\by A.~G.~Vitukhnovsky, A.~A.~Vashchenko, V.~S.~Lebedev, R.~B.~Vasiliev, P.~N.~Brunkov, D.~N.~Bychkovskii
\paper Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 7
\pages 962--969
\mathnet{http://mi.mathnet.ru/phts7971}
\elib{https://elibrary.ru/item.asp?id=20319497}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 7
\pages 971--977
\crossref{https://doi.org/10.1134/S1063782613070245}
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  • https://www.mathnet.ru/eng/phts/v47/i7/p962
  • This publication is cited in the following 16 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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