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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 962–969
(Mi phts7971)
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This article is cited in 16 scientific papers (total in 16 papers)
Semiconductor physics
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
A. G. Vitukhnovskya, A. A. Vashchenkoa, V. S. Lebedevab, R. B. Vasilievc, P. N. Brunkovde, D. N. Bychkovskiie a P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
b Moscow Engineering Physics Institute (State University)
c Lomonosov Moscow State University
d Ioffe Institute, St. Petersburg
e Optogan-OLS, St. Petersburg, 198205, Russia
Abstract:
The results of an experimental study of organic light-emitting diodes (LEDs) with luminescent layers based on two types of CdSe/CdS semiconductor quantum dots (QDs) with an average CdSe core diameter of 3 and 5 nm and a characteristic CdS shell thickness of 0.5 nm are presented. The dependences of the LED efficiency on the QD concentration are determined. The experimental data are used to determine the mechanism of electronic-excitation transfer from the organic matrix to the semiconductor QDs. Ways of optimizing the design of the LEDs in order to improve their efficiency are suggested on this basis.
Received: 24.09.2012 Accepted: 24.09.2012
Citation:
A. G. Vitukhnovsky, A. A. Vashchenko, V. S. Lebedev, R. B. Vasiliev, P. N. Brunkov, D. N. Bychkovskii, “Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 962–969; Semiconductors, 47:7 (2013), 971–977
Linking options:
https://www.mathnet.ru/eng/phts7971 https://www.mathnet.ru/eng/phts/v47/i7/p962
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