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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 970–978
(Mi phts7972)
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This article is cited in 4 scientific papers (total in 4 papers)
Semiconductor physics
Theory of steady-state plane tunneling-assisted impact ionization waves
A. S. Kyuregyan Russian Electrotechnical Institute Named after V. I. Lenin
Abstract:
The effect of band-to-band and trap-assisted tunneling on the properties of steady-state plane ionization waves in
$p^+$–$n$–$n^+$-structures is theoretically analyzed. It is shown that such tunneling-assisted impact ionization waves do not differ in a qualitative sense from ordinary impact ionization waves propagating due to the avalanche multiplication of uniformly distributed seed electrons and holes. The quantitative differences of tunneling-assisted impact ionization waves from impact ionization waves are reduced to a slightly different relation between the wave velocity $u$ and the maximum field strength $E_M$ at the front. It is shown that disregarding impact ionization does not exclude the possibility of the existence of tunneling-assisted ionization waves; however, their structure radically changes, and their velocity strongly decreases for the same $E_M$. A comparison of the dependences $u(E_M)$ for various ionization-wave types makes it possible to determine the conditions under which one of them is dominant. In conclusion, unresolved problems concerning the theory of tunneling-assisted impact ionization waves are discussed and the directions of further studies are outlined.
Received: 02.10.2012 Accepted: 11.10.2012
Citation:
A. S. Kyuregyan, “Theory of steady-state plane tunneling-assisted impact ionization waves”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 970–978; Semiconductors, 47:7 (2013), 978–986
Linking options:
https://www.mathnet.ru/eng/phts7972 https://www.mathnet.ru/eng/phts/v47/i7/p970
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