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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 7, Pages 997–1001
(Mi phts7976)
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This article is cited in 25 scientific papers (total in 25 papers)
Manufacturing, processing, testing of materials and structures
Properties of Sb$_2$S$_3$ and Sb$_2$Sе$_3$ thin films obtained by pulsed laser ablation
I. S. Virtab, I. A. Rudyjc, I. V. Kuriloc, I. E. Lopatynskyic, L. F. Linnikd, V. V. Tetyorkind, P. Poterab, G. Lukae a Drohobych Ivan Franko State Pedagogical University
b Rzeszow University, Rzeszow, Poland
c Lviv Polytechnic National University
d Institute of Semiconductor Physics NAS, Kiev
e Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
Abstract:
The properties of Sb$_2$S$_3$ and Sb$_2$Sе$_3$ thin films of variable thickness deposited onto Al$_2$O$_3$, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180$^\circ$C in a vacuum chamber with a residual pressure of 10$^{-5}$ Torr. The thickness of the films amounted to 40–1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253–310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.
Received: 01.10.2012 Accepted: 20.10.2012
Citation:
I. S. Virt, I. A. Rudyj, I. V. Kurilo, I. E. Lopatynskyi, L. F. Linnik, V. V. Tetyorkin, P. Potera, G. Luka, “Properties of Sb$_2$S$_3$ and Sb$_2$Sе$_3$ thin films obtained by pulsed laser ablation”, Fizika i Tekhnika Poluprovodnikov, 47:7 (2013), 997–1001; Semiconductors, 47:7 (2013), 1003–1007
Linking options:
https://www.mathnet.ru/eng/phts7976 https://www.mathnet.ru/eng/phts/v47/i7/p997
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