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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 8, Pages 1137–1143 (Mi phts7999)  
This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University
Full-text PDF (1371 kB) Citations (2)
Abstract: The effect of the annealing temperature on the I–V, C–I, and G–V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga$_2$O$_3$ powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures $T_{\mathrm{an}}\ge$ 800$^\circ$C. The electrical characteristics and photoresponse of the V/Ni–GaAs–GaAs–Ga$_x$O$_y$–V/Ni samples to visible radiation depend on the structure and phase composition of the films.
Received: 20.12.2012
Accepted: 10.01.2013
English version:
Semiconductors, 2013, Volume 47, Issue 8, Pages 1130–1136
DOI: https://doi.org/10.1134/S1063782613080071
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Kalygina, V. V. Vishnikina, A. N. Zarubin, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, S. Yu. Tsupiy, T. M. Yaskevich, “Effect of annealing in argon on the properties of thermally deposited gallium-oxide films”, Fizika i Tekhnika Poluprovodnikov, 47:8 (2013), 1137–1143; Semiconductors, 47:8 (2013), 1130–1136
Citation in format AMSBIB
\Bibitem{KalVisZar13}
\by V.~M.~Kalygina, V.~V.~Vishnikina, A.~N.~Zarubin, V.~A.~Novikov, Yu.~S.~Petrova, O.~P.~Tolbanov, A.~V.~Tyazhev, S.~Yu.~Tsupiy, T.~M.~Yaskevich
\paper Effect of annealing in argon on the properties of thermally deposited gallium-oxide films
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2013
\vol 47
\issue 8
\pages 1137--1143
\mathnet{http://mi.mathnet.ru/phts7999}
\elib{https://elibrary.ru/item.asp?id=20319542}
\transl
\jour Semiconductors
\yr 2013
\vol 47
\issue 8
\pages 1130--1136
\crossref{https://doi.org/10.1134/S1063782613080071}
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  • https://www.mathnet.ru/eng/phts/v47/i8/p1137
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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