Electrical and photoelectric properties of anisotype $n$-TiN/$p$-Si heterojunctions

Photosensitive $n$-TiN/$p$-Si heterojunctions are fabricated by the reactive magnetron sputtering of a thin titanium-nitride film with $n$-type conductivity onto polished polycrystalline $p$-Si wafers. The I–V characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and series resistance of the $n$-TiN/$p$-Si heterojunction are studied. The dominant mechanisms of current transport through the heterojunction in the cases of forward and reverse bias are established. The heterostructures generate the open-circuit voltage $V_{\mathrm{oc}}$ = 0.4 V and the short-circuit current $I_{\mathrm{sc}}$ = 1.36 mA/cm$^2$ under illumination with a power density of 80 mW/cm$^2$.