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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 9, Pages 1253–1257
(Mi phts8019)
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This article is cited in 7 scientific papers (total in 7 papers)
Semiconductor structures, low-dimensional systems, quantum phenomena
Anisotropy of the electron $g$ factor in quantum wells based on cubic semiconductors
P. S. Alekseev Ioffe Institute, St. Petersburg
Abstract:
A new mechanism for the spin splitting of electron levels in asymmetric quantum wells based on GaAs-type semiconductors relative to rotations of the magnetic field in the well plane is suggested. It is demonstrated that the anisotropy of the Zeeman splitting (linear in a magnetic field) arises in asymmetric quantum wells due to the interface spin-orbit terms in the electron Hamiltonian. In the case of symmetric quantum wells, it is shown that the anisotropy of the Zeeman splitting is a cubic function of the magnitude of the magnetic field, depends on the direction of the magnetic field in the interface plane as the fourth-order harmonic, and is governed by the spin-orbit term of the fourth order by the kinematic momentum in the electron Hamiltonian of a bulk semiconductor.
Received: 04.03.2013 Accepted: 11.03.2013
Citation:
P. S. Alekseev, “Anisotropy of the electron $g$ factor in quantum wells based on cubic semiconductors”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1253–1257; Semiconductors, 47:9 (2013), 1241–1245
Linking options:
https://www.mathnet.ru/eng/phts8019 https://www.mathnet.ru/eng/phts/v47/i9/p1253
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