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Fizika i Tekhnika Poluprovodnikov, 2013, Volume 47, Issue 9, Pages 1276–1278
(Mi phts8023)
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This article is cited in 3 scientific papers (total in 3 papers)
Manufacturing, processing, testing of materials and structures
Properties of silicon films grown under different pressures in a plasma-forming system
D. M. Mitinab, A. A. Serdobintsevab a Saratov State University
b Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
Abstract:
The influence of the working-gas pressure on the properties of thin silicon films synthesized by dc magnetron sputtering is investigated. Films obtained under lower pressures are characterized by lower roughness and resistivity. These features can qualitatively be explained by the longer free particle path in the deposition flux under lower pressure.
Received: 29.11.2012 Accepted: 10.12.2012
Citation:
D. M. Mitin, A. A. Serdobintsev, “Properties of silicon films grown under different pressures in a plasma-forming system”, Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1276–1278; Semiconductors, 46:9 (2013), 1264–1266
Linking options:
https://www.mathnet.ru/eng/phts8023 https://www.mathnet.ru/eng/phts/v47/i9/p1276
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